Thermoelectrics

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MicroStrain, Inc. (Williston, VT) introduces EH-Link™, a new hybrid energy harvesting wireless sensor node that collects energy from multiple sources including strain, vibration, thermal gradients, ambient light, and thermal and electromagnetic fields.
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Cymbet Corporation (Elk River, MN) introduces the EnerChip™ Energy Processor (EP) CBC915, which works universally across all energy harvesting transducer technologies including photovoltaic, thermoelectric, piezoelectric, and electromagnetic.
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A new thermoelectric power generator from Johnson Space Center consists of an oven box and a solar cooker/solar reflector unit. The solar reflector concentrates sunlight into heat and transfers the heat into the oven box via a heat pipe.
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Nextreme Thermal Solutions (Durham, NC) introduces an updated version of the OptoCooler HV14 that enables assembly temperatures as high as 320°C. The RoHS-compliant OptoCooler HV14 module is a high heat pumping thermoelectric device designed for standard electrical power requirements.
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The need to get rid of excess heat creates a major source of inefficiency in everything from computer processor chips to car engines. According to Peter Hagelstein, an associate professor of Electrical Engineering at MIT, existing solid-state devices to convert heat into electricity are not very efficient. Experimenting with thermal diodes, an MIT team has come closer to the theoretical limitations for the efficiency of such a conversion.
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Nextreme Thermal Solutions (Durham, NC) and Infinite Power Solutions, Inc. (Denver, CO) offer a thermal charger that can continuously recharge the IPS THINERGY^TM Micro-Energy Cell (MEC) using an eTEG thermoelectric power generator from Nextreme. Storing energy harvested from waste heat using thermoelectrics enables an alternative energy source for various autonomous applications.
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SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations.
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